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2007

24. Structural investigation of nitride c- sapphire substrate by grazing incidence X-ray diffraction and transmission electron microscopy

H.-J. Lee, J. -S. Ha, S. W. Lee, H. J. Lee, H. Goto, S. H. Lee, M.W. Cho, and T. Yao

Appl. Phys. Lett. 91, 202116 (2007).

23. Self-separated free standing GaN using an NH4Cl interlayer

H. J. Lee, S. W, Lee, H. Goto, S. H. Lee, H. –J. Lee, J. S. Ha, T. Goto, M. W. Cho, and T. Yao

Appl. Phys. Lett. 91, 192280 (2007).

22. Characterization of free-standing GaN substrates prepared by self lift-off

S. W. Lee, H. Goto, T. Minegishi, W. H. Lee, J. S. Ha, H. J. Lee, Hyo-Jong Lee, S. H. Lee, T. Goto, T. Hanada, M. W. Cho, and T. Yao

Phys. Stat. Sol (c) 4, 2617 (2007).

21. Fabrication of porous ZnO nanostructures and morphology control

S. H. Lee, H. J. Lee, H. Goto, M. W. Cho, and T. Yao

Phys. Stat. Sol (c) 4, 1747 (2007).

20. Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique

S. W. Lee, T. Minegishi, W. H. Lee, H. Goto, H. J. Lee, S. H. Lee, Hyo-Jong Lee, J. S. Ha, T. Goto, T. Hanada, M. W. Cho, and T. Yao

Appl. Phys. Lett. 90, 061907 (2007).

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